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SUMMARY:In situ\, operando investigation of thin film devices using LE-μS
 R
DTSTART;VALUE=DATE-TIME:20220901T164000Z
DTEND;VALUE=DATE-TIME:20220901T170000Z
DTSTAMP;VALUE=DATE-TIME:20220826T122107Z
UID:indico-contribution-3813@indico.stfc.ac.uk
DESCRIPTION:Speakers: Zaher Salman (Paul Scherrer Institute)\nTuning the e
 nergy of incoming muons in the low energy muons (LEM) spectrometer is done
  primarily by applying a high voltage (HV) on the sample plate to accelera
 te or decelerate the implanted muons. Therefore\, any manipulation on the 
 sample that requires the use of direct contacts to it becomes complicated.
  For example\, in order to run a current through the sample or apply an el
 ectric field on the sample\, the power supply and contacts have to be on t
 he same HV as the sample. A simple way to achieve this is to place the pow
 er supply (or any other standard lab equipment or device) on an insulated 
 platform outside the cryostat and bias both the sample and the device by t
 he same HV. Although the idea is simple\, its application requires serious
  safety and reliability considerations. Here we present the design of this
  HV table (see figure) and discuss some applications in various thin film 
 devices.\n![Schematic of the LEM high voltage table][1]\n\n\n  [1]: https:
 //drive.switch.ch/index.php/s/EGlFIpTaDp28wvd/download\n\nhttps://indico.s
 tfc.ac.uk/event/53/contributions/3813/
LOCATION:Science and Technology Campus\, University of Parma
URL:https://indico.stfc.ac.uk/event/53/contributions/3813/
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