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SUMMARY:Local electronic structure of dilute hydrogen in gallium oxide
DTSTART;VALUE=DATE-TIME:20220830T164000Z
DTEND;VALUE=DATE-TIME:20220830T170000Z
DTSTAMP;VALUE=DATE-TIME:20220826T120715Z
UID:indico-contribution-3734@indico.stfc.ac.uk
DESCRIPTION:Speakers: Masatoshi Hiraishi (Ibaraki University)\nGallium oxi
 de $\\beta$-Ga$_2$O$_3$ is currently drawing much attention as a material 
 for high-voltage power devices because of its large band gap ($E_\\mathrm{
 g}\\sim$4.9 eV). We investigated the electronic structures of muon as a ps
 eudo-hydrogen in $\\beta$-Ga$_2$O$_3$ in which the dilute hydrogen is unde
 r the central focus as a crucial factor for the bulk conducting properties
 . We demonstrate by $\\mu$SR study combined with the first principles calc
 ulations that muons in $\\beta$-Ga$_2$O$_3$ have two electronic structures
 : a state corresponding to hydrogen that acts as an electron donor (Mu$_1$
 )\, bounded to three-coordinated oxygen\, and a hydride-like state in rapi
 d motion (Mu$_2$). Furthermore\, we imply from the Hall effect measurement
 s that the fractional yield of Mu$_2$ exhibits a close link with the mobil
 ity and density of the carriers (electrons).\nIn the presentation\, we wil
 l compare our results with those of previous study and discuss the electro
 nic structures of Mu$_1$ and Mu$_2$ in terms of our recently proposed ambi
 polar model of muon in oxides.\n\nhttps://indico.stfc.ac.uk/event/53/contr
 ibutions/3734/
LOCATION:Science and Technology Campus\, University of Parma
URL:https://indico.stfc.ac.uk/event/53/contributions/3734/
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