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SUMMARY:Low energy muon study of the p-n interface in chalcopyrite solar c
 ells
DTSTART;VALUE=DATE-TIME:20220830T095000Z
DTEND;VALUE=DATE-TIME:20220830T101000Z
DTSTAMP;VALUE=DATE-TIME:20220826T110828Z
UID:indico-contribution-3625@indico.stfc.ac.uk
DESCRIPTION:Speakers: Helena Vieira Alberto (University of Coimbra\, Portu
 gal)\nThe slow muons technique provides a quantitative approach to charact
 erize the effect of various cover layers on the passivation of bulk defect
 s near the p-n junction of solar cells [1]. \nSeveral cover layers on top 
 of the chalcopyrite Cu(In\,Ga)Se2 (CIGS) semiconductor absorber were inves
 tigated in this work\, namely CdS\, ZnSnO\, Al2O3 and SiO2. \n\n\nThe figu
 re shows the depth profile of a measurement on a CdS/CIGS sample. The diam
 agnetic fraction is used as an indication of the perturbation of the latti
 ce at the site of the muon. The lower part of the figure shows the model d
 epth profile obtained after deconvolution of the experimental data with th
 e range distribution function. The dip in the diamagnetic fraction near th
 e interface indicates that the lattice is more perturbed in this near-inte
 rface region than further inward in the sample. We find that CdS provides 
 the best defect passivation\; the oxide materials are less effective.\n\n[
 1] Alberto\, H.V. et al. “Characterization of the interfacial defect lay
 er in chalcopyrite solar cells by depth resolved muon spin spectroscopy”
 \, accepted for publication in Advanced Materials Interface\, 2022.\n\n![D
 epth profile of the diamagnetic fraction for CdS/CIGS. The lower part disp
 lays the model function used in the fit.][1]\n\n\n  [1]: http://algol.fis.
 uc.pt/muon/CdS_CIGS_Fig.jpg\n\nhttps://indico.stfc.ac.uk/event/53/contribu
 tions/3625/
LOCATION:Science and Technology Campus\, University of Parma
URL:https://indico.stfc.ac.uk/event/53/contributions/3625/
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